IXYS Corporation Electronic Surplus - IXTP102N15T IXTP102N15T

Description
Manufacturer: IXYS Win Source Part Number: 1191273-IXTP102N15T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 455W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 102A Rds On (Maximum) at Id, Vgs: 18mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 87nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5220pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191273-IXTP102N15T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 455W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 102A Rds On (Maximum) at Id, Vgs: 18mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 87nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5220pF at 25V
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Electronic Surplus - IXTP102N15T - 1191273-IXTP102N15T - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IXTP102N15T
1191273-IXTP102N15T
Electronic Surplus - IXTP102N15T 1191273-IXTP102N15T
Manufacturer: IXYS Win Source Part Number: 1191273-IXTP102N15T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 455W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 102A Rds On (Maximum) at Id, Vgs: 18mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 87nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5220pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191273-IXTP102N15T
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 455W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 102A
Rds On (Maximum) at Id, Vgs: 18mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 87nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5220pF at 25V

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 1191273-IXTP102N15T
Product Name Electronic Surplus - IXTP102N15T
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