Zilog Single FETs, MOSFETs IXTP08N100P

Description
N-Channel 1000V 800mA (Tc) 42W (Tc) Through Hole TO-220-3
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Description
N-Channel 1000V 800mA (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTP08N100P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP08N100P-ND
Single FETs, MOSFETs IXTP08N100P-ND
N-Channel 1000V 800mA (Tc) 42W (Tc) Through Hole TO-220-3

N-Channel 1000V 800mA (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323977-IXTP08N100P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323977-IXTP08N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323977-IXTP08N100P
Manufacturer: IXYS Win Source Part Number: 1323977-IXTP08N100P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 42W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTP08 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1323977-IXTP08N100P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXTP08
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP08N100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP08N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP08N100P
MOSFET N-CH 1000V 800MA TO220AB

MOSFET N-CH 1000V 800MA TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 0.8 Amps 1000V 20 Rds

MOSFET 0.8 Amps 1000V 20 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP08N100P-ND 1323977-IXTP08N100P IXTP08N100P IXTP08N100P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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