MOSFET N-CH 1000V 800MA TO220AB
Manufacturer: IXYS
Win Source Part Number: 1191272-IXTP08N100D2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 800mA
Rds On (Maximum) at Id, Vgs: 21Ohm at 400mA, 0V
Gate Charge (Qg) (Maximum) at Vgs: 14.6nC at 5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 325pF at 25V
N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220-3
MOSFET N-CH MOSFETS 1000V 800MA
MOSFET, N-CH, 1KV, 0.8A, TO-220AB ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 1000V 800MA TO220AB
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IXTP08N100D2 | 1191272-IXTP08N100D2 | 238-IXTP08N100D2-ND | IXTP08N100D2 | 136206873 | IXTP08N100D2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IXTP08N100D2 | Single FETs, MOSFETs | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 1000 volts | 1000 volts | ||||
| IDSS | 800 milliamps | |||||
| PD | 60000 milliwatts | 60000 milliwatts |
