Zilog Single FETs, MOSFETs IXTP08N100D2

Description
N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTP08N100D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP08N100D2-ND
Single FETs, MOSFETs 238-IXTP08N100D2-ND
N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220-3

N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IXTP08N100D2 - 1191272-IXTP08N100D2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTP08N100D2
1191272-IXTP08N100D2
FETs - Single - IXTP08N100D2 1191272-IXTP08N100D2
Manufacturer: IXYS Win Source Part Number: 1191272-IXTP08N100D2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET FET Feature: Depletion Mode Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 800mA Rds On (Maximum) at Id, Vgs: 21Ohm at 400mA, 0V Gate Charge (Qg) (Maximum) at Vgs: 14.6nC at 5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 325pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191272-IXTP08N100D2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 800mA
Rds On (Maximum) at Id, Vgs: 21Ohm at 400mA, 0V
Gate Charge (Qg) (Maximum) at Vgs: 14.6nC at 5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 325pF at 25V

Buy Now
Single FETs, MOSFETs - IXTP08N100D2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP08N100D2
Single FETs, MOSFETs IXTP08N100D2
MOSFET N-CH 1000V 800MA TO220AB

MOSFET N-CH 1000V 800MA TO220AB

Supplier's Site Datasheet
Transistor - 136206873 - Radwell International
Willingboro, NJ, United States
Transistor
136206873
Transistor 136206873
MOSFET, N-CH, 1KV, 0.8A, TO-220AB ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 1KV, 0.8A, TO-220AB ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP08N100D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP08N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP08N100D2
MOSFET N-CH 1000V 800MA TO220AB

MOSFET N-CH 1000V 800MA TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH MOSFETS 1000V 800MA

MOSFET N-CH MOSFETS 1000V 800MA

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTP08N100D2-ND 1191272-IXTP08N100D2 IXTP08N100D2 136206873 IXTP08N100D2 IXTP08N100D2
Product Name Single FETs, MOSFETs FETs - Single - IXTP08N100D2 Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
MOSFET Operating Mode Depletion
V(BR)DSS 1000 volts 1000 volts
PD 60000 milliwatts 60000 milliwatts
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