N-Channel 40V 660A (Tc) 1040W (Tc) Chassis Mount SOT-227B
Manufacturer: IXYS
Win Source Part Number: 1006591-IXTN660N04T4
Packaging: Bulk
Mounting: Chassis Mount
Technology: MOSFET
FET Feature: Current Sensing
Polarity: N-Channel
Power Dissipation (Max): 1040W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-227B
Dimension: SOT-227-4, miniBLOC
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 660A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 860nC @ 10V
Max Input Capacitance: 44000pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 0.85 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET 40V/660A TrenchT4 Power MOSFET
MOSFET N-CH 40V 660A SOT227B
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTN660N04T4-ND | 1006591-IXTN660N04T4 | IXTN660N04T4 | IXTN660N04T4 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTN660N04T4 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT-227-4, miniBLOC | SOT3; SOT-227B | SOT-227-4, miniBLOC | |
| V(BR)DSS | 40 volts |
