Zilog Single FETs, MOSFETs IXTN30N100L

Description
N-Channel 1000V 30A (Tc) 800W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
N-Channel 1000V 30A (Tc) 800W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTN30N100L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTN30N100L-ND
Single FETs, MOSFETs 238-IXTN30N100L-ND
N-Channel 1000V 30A (Tc) 800W (Tc) Chassis Mount SOT-227B

N-Channel 1000V 30A (Tc) 800W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324366-IXTN30N100L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324366-IXTN30N100L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324366-IXTN30N100L
Manufacturer: IXYS Win Source Part Number: 1324366-IXTN30N100L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 800W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 78 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: Q3424174 Base Product Number: IXTN30 Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324366-IXTN30N100L
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Bulk
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 800W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: Q3424174
Base Product Number: IXTN30
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTN30N100L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTN30N100L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTN30N100L
MOSFET N-CH 1000V 30A SOT227B

MOSFET N-CH 1000V 30A SOT227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30 Amps 1000V

MOSFET 30 Amps 1000V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTN30N100L-ND 1324366-IXTN30N100L IXTN30N100L IXTN30N100L
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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