Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTN17N120L

Description
Manufacturer: IXYS Win Source Part Number: 1324626-IXTN17N120L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTN17 Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: IXYS Win Source Part Number: 1324626-IXTN17N120L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTN17 Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324626-IXTN17N120L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324626-IXTN17N120L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324626-IXTN17N120L
Manufacturer: IXYS Win Source Part Number: 1324626-IXTN17N120L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTN17 Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324626-IXTN17N120L
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXTN17
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXTN17N120L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTN17N120L
Single FETs, MOSFETs IXTN17N120L
MOSFET N-CH 1200V 15A SOT-227B

MOSFET N-CH 1200V 15A SOT-227B

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTN17N120L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTN17N120L-ND
Single FETs, MOSFETs IXTN17N120L-ND
N-Channel 1200V 15A (Tc) 540W (Tc) Chassis Mount SOT-227B

N-Channel 1200V 15A (Tc) 540W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTN17N120L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTN17N120L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTN17N120L
MOSFET N-CH 1200V 15A SOT-227B

MOSFET N-CH 1200V 15A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 17 Amps 1200V

MOSFET 17 Amps 1200V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324626-IXTN17N120L IXTN17N120L IXTN17N120L-ND IXTN17N120L IXTN17N120L
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 540000 milliwatts 540000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
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