Zilog Single FETs, MOSFETs IXTN120P20T

Description
P-Channel 200V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
P-Channel 200V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTN120P20T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTN120P20T-ND
Single FETs, MOSFETs IXTN120P20T-ND
P-Channel 200V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B

P-Channel 200V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324569-IXTN120P20T - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324569-IXTN120P20T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324569-IXTN120P20T
Manufacturer: IXYS Win Source Part Number: 1324569-IXTN120P20T Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 830W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V Vgs (Max): ±15V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTN120 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324569-IXTN120P20T
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Vgs (Max): ±15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXTN120
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET TrenchP Power MOSFET

MOSFET TrenchP Power MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTN120P20T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTN120P20T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTN120P20T
MOSFET P-CH 200V 106A SOT227B

MOSFET P-CH 200V 106A SOT227B

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTN120P20T-ND 1324569-IXTN120P20T IXTN120P20T IXTN120P20T
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
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