IXYS Corporation FET, MOSFET Arrays IXTL2X180N10T

Description
Mosfet Array 2 N-Channel (Dual) 100V 100A 150W Through Hole ISOPLUSi5-Pak™
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 100V 100A 150W Through Hole ISOPLUSi5-Pak™
Request a Quote Datasheet

Suppliers

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Product
Description
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FET, MOSFET Arrays - IXTL2X180N10T-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IXTL2X180N10T-ND
FET, MOSFET Arrays IXTL2X180N10T-ND
Mosfet Array 2 N-Channel (Dual) 100V 100A 150W Through Hole ISOPLUSi5-Pak™

Mosfet Array 2 N-Channel (Dual) 100V 100A 150W Through Hole ISOPLUSi5-Pak™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTL2X180N10T - 777656-IXTL2X180N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTL2X180N10T
777656-IXTL2X180N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTL2X180N10T 777656-IXTL2X180N10T
Manufacturer: IXYS Win Source Part Number: 777656-IXTL2X180N10T Series: Trench Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: ISOPLUSi5-Pak FET Type: 2 N-Channel (Dual) FET Feature: Standard Current - Continuous Drain (Id) @ 25°C: 100A Power - Max: 150W Family Name: IXTL2X180N10T Categories: Discrete Semiconductor Products Manufacturer Package: ISOPLUSi5-Pak Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 25V Rds On (Maximum) @ Id, Vgs: 7.4 mOhm @ 50A, 10V Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777656-IXTL2X180N10T
Series: Trench
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: ISOPLUSi5-Pak
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 100A
Power - Max: 150W
Family Name: IXTL2X180N10T
Categories: Discrete Semiconductor Products
Manufacturer Package: ISOPLUSi5-Pak
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 151nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 25V
Rds On (Maximum) @ Id, Vgs: 7.4 mOhm @ 50A, 10V
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTL2X180N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTL2X180N10T
MOSFET 2N-CH 100V 100A I5-PAK

MOSFET 2N-CH 100V 100A I5-PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTL2X180N10T-ND 777656-IXTL2X180N10T IXTL2X180N10T
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTL2X180N10T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type ISOPLUSi5-PAK™ SOT3
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