Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK82N25P IXTK82N25P

Description
Manufacturer: IXYS Win Source Part Number: 777655-IXTK82N25P Series: PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Family Name: IXTK82N25P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-264 (IXTK) Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4800pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 500W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 41A, 10V Alternative Parts (Cross-Reference): IRFP4229PBF; STW52NK25Z; H5N2503P-E; RJK2511DPK-00#T0; Introduction Date: July 16, 2014 Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK82N25P - 777655-IXTK82N25P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTK82N25P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTK82N25P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 777655-IXTK82N25P Series: PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Family Name: IXTK82N25P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-264 (IXTK) Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4800pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 500W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 41A, 10V Alternative Parts (Cross-Reference): IRFP4229PBF; STW52NK25Z; H5N2503P-E; RJK2511DPK-00#T0; Introduction Date: July 16, 2014 Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK82N25P - 777655-IXTK82N25P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK82N25P
777655-IXTK82N25P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK82N25P 777655-IXTK82N25P
Manufacturer: IXYS Win Source Part Number: 777655-IXTK82N25P Series: PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Family Name: IXTK82N25P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-264 (IXTK) Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4800pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 500W (Tc) Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 41A, 10V Alternative Parts (Cross-Reference): IRFP4229PBF; STW52NK25Z; H5N2503P-E; RJK2511DPK-00#T0; Introduction Date: July 16, 2014 Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777655-IXTK82N25P
Series: PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Family Name: IXTK82N25P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-264 (IXTK)
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 142nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4800pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 500W (Tc)
Rds On (Maximum) @ Id, Vgs: 35 mOhm @ 41A, 10V
Alternative Parts (Cross-Reference): IRFP4229PBF; STW52NK25Z; H5N2503P-E; RJK2511DPK-00#T0;
Introduction Date: July 16, 2014
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTK82N25P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTK82N25P-ND
Single FETs, MOSFETs IXTK82N25P-ND
N-Channel 250V 82A (Tc) 500W (Tc) Through Hole TO-264 (IXTK)

N-Channel 250V 82A (Tc) 500W (Tc) Through Hole TO-264 (IXTK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTK82N25P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTK82N25P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTK82N25P
MOSFET N-CH 250V 82A TO264

MOSFET N-CH 250V 82A TO264

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTK82N25P
MOSFET IXTK82N25P
MOSFET 82 Amps 250V 0.035 Rds

MOSFET 82 Amps 250V 0.035 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777655-IXTK82N25P IXTK82N25P-ND IXTK82N25P IXTK82N25P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK82N25P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 500000 milliwatts
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