Win Source Part Number: 1338611-IXTK32P60P
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: PolarP™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 890W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTK32
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
P-Channel 600V 32A (Tc) 890W (Tc) Through Hole TO-264 (IXTK)
MOSFET P-CH 600V 32A TO264
MOSFET P-CH 600V 32A TO264
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1338611-IXTK32P60P | 238-IXTK32P60P-ND | IXTK32P60P | IXTK32P60P | IXTK32P60P |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||
| PD | 890000 milliwatts | 890000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
