Littelfuse, Inc. Single FETs, MOSFETs IXTK200N10P

Description
N-Channel 100V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)
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Description
N-Channel 100V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 238-IXTK200N10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTK200N10P-ND
Single FETs, MOSFETs 238-IXTK200N10P-ND
N-Channel 100V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)

N-Channel 100V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1066205-IXTK200N10P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1066205-IXTK200N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1066205-IXTK200N10P
Win Source Part Number: 1066205-IXTK200N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 5V @ 500µA Power Dissipation (Max): 800W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXTK) Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FDL100N50F; FQL40N50; FQL40N50F; FQL50N40; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTK200 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1066205-IXTK200N10P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Polar
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 800W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FDL100N50F; FQL40N50; FQL40N50F; FQL50N40;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTK200
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET 200 Amps 100V 0.0075 Rds

MOSFET 200 Amps 100V 0.0075 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTK200N10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTK200N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTK200N10P
MOSFET N-CH 100V 200A TO264

MOSFET N-CH 100V 200A TO264

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTK200N10P-ND 1066205-IXTK200N10P IXTK200N10P IXTK200N10P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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