Zilog Single FETs, MOSFETs IXTK200N10L2

Description
MOSFET N-CH 100V 200A TO264
Request a Quote Datasheet
Description
MOSFET N-CH 100V 200A TO264
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTK200N10L2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTK200N10L2
Single FETs, MOSFETs IXTK200N10L2
MOSFET N-CH 100V 200A TO264

MOSFET N-CH 100V 200A TO264

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1188638-IXTK200N10L2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1188638-IXTK200N10L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1188638-IXTK200N10L2
Win Source Part Number: 1188638-IXTK200N10L2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Linear L2™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 1040W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXTK) Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: Q7017004 Base Product Number: IXTK200 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1188638-IXTK200N10L2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Linear L2™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 1040W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: Q7017004
Base Product Number: IXTK200
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTK200N10L2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTK200N10L2-ND
Single FETs, MOSFETs 238-IXTK200N10L2-ND
N-Channel 100V 200A (Tc) 1040W (Tc) Through Hole TO-264 (IXTK)

N-Channel 100V 200A (Tc) 1040W (Tc) Through Hole TO-264 (IXTK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTK200N10L2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTK200N10L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTK200N10L2
MOSFET N-CH 100V 200A TO264

MOSFET N-CH 100V 200A TO264

Supplier's Site
Sheung Wan, Hong Kong
MOSFET L2 Linear Power MOSFET

MOSFET L2 Linear Power MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTK200N10L2 1188638-IXTK200N10L2 238-IXTK200N10L2-ND IXTK200N10L2 IXTK200N10L2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
IDSS 200000 milliamps
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