Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTK160N20

Description
Win Source Part Number: 1346737-IXTK160N20 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: MegaMOS™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 730W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXTK) Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTK160 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 415 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V
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Description
Win Source Part Number: 1346737-IXTK160N20 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: MegaMOS™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 730W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXTK) Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTK160 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 415 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346737-IXTK160N20 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346737-IXTK160N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346737-IXTK160N20
Win Source Part Number: 1346737-IXTK160N20 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: MegaMOS™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 730W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXTK) Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTK160 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 415 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V

Win Source Part Number: 1346737-IXTK160N20
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: MegaMOS™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 730W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTK160
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 415 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTK160N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTK160N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTK160N20
MOSFET N-CH 200V 160A TO264

MOSFET N-CH 200V 160A TO264

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 160 Amps 200V 0.013 Rds

MOSFET 160 Amps 200V 0.013 Rds

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1346737-IXTK160N20 IXTK160N20 IXTK160N20
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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