MOSFET N-CH 250V 120A TO264
Manufacturer: IXYS
Win Source Part Number: 205705-IXTK120N25P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-264 (IXTK)
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 5V @ 500μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 8000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 250V 120A (Tc) 700W (Tc) Through Hole TO-264 (IXTK)
MOSFET N-CH 250V 120A TO264
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTK120N25P | 205705-IXTK120N25P | 238-IXTK120N25P-ND | IXTK120N25P | IXTK120N25P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTK120N25P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 250 volts | 250 volts | |||
| IDSS | 120000 milliamps |
