N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)
Win Source Part Number: 1029585-IXTK110N20L2
Category: Discrete Semiconductor Products>Transistors
Series: Linear L2™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 960W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDL100N50F; FGL40N120ANDTU; NJL1302DG; 2STA1943; 2STA2121; FQL50N40;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTK110
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 200V 110A TO264
MOSFET LINEAR L2 SERIES MOSFET 200V 110A
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 238-IXTK110N20L2-ND | 1029585-IXTK110N20L2 | IXTK110N20L2 | IXTK110N20L2 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
