IXYS Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTI12N50P

Win Source Part Number: 1346687-IXTI12N50P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Power Dissipation (Max): 200W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 (I2PAK) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTI12 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V