Zilog Single FETs, MOSFETs IXTH75N10L2

Description
N-Channel 100V 75A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
N-Channel 100V 75A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 238-IXTH75N10L2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH75N10L2-ND
Single FETs, MOSFETs 238-IXTH75N10L2-ND
N-Channel 100V 75A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)

N-Channel 100V 75A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH75N10L2 - 1049832-IXTH75N10L2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH75N10L2
1049832-IXTH75N10L2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH75N10L2 1049832-IXTH75N10L2
Manufacturer: IXYS Win Source Part Number: 1049832-IXTH75N10L2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 215nC @ 10V Max Input Capacitance: 8100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049832-IXTH75N10L2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 215nC @ 10V
Max Input Capacitance: 8100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH75N10L2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH75N10L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH75N10L2
MOSFET N-CH 100V 75A TO247

MOSFET N-CH 100V 75A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET LinearL2 Powr MOSFET w/extended FBSOA

MOSFET LinearL2 Powr MOSFET w/extended FBSOA

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTH75N10L2-ND 1049832-IXTH75N10L2 IXTH75N10L2 IXTH75N10L2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH75N10L2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
V(BR)DSS 100 volts
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