Manufacturer: IXYS
Win Source Part Number: 1049832-IXTH75N10L2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 215nC @ 10V
Max Input Capacitance: 8100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
N-Channel 100V 75A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
MOSFET LinearL2 Powr MOSFET w/extended FBSOA
MOSFET N-CH 100V 75A TO247
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049832-IXTH75N10L2 | 238-IXTH75N10L2-ND | IXTH75N10L2 | IXTH75N10L2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH75N10L2 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | |||
| PD | 400000 milliwatts |
