Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N50D2 IXTH6N50D2

Description
Manufacturer: IXYS Win Source Part Number: 1049826-IXTH6N50D2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Max Gate Charge: 96nC @ 5V Max Input Capacitance: 2800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 3A, 0V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Description
Manufacturer: IXYS Win Source Part Number: 1049826-IXTH6N50D2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Max Gate Charge: 96nC @ 5V Max Input Capacitance: 2800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 3A, 0V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N50D2 - 1049826-IXTH6N50D2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N50D2
1049826-IXTH6N50D2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N50D2 1049826-IXTH6N50D2
Manufacturer: IXYS Win Source Part Number: 1049826-IXTH6N50D2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Max Gate Charge: 96nC @ 5V Max Input Capacitance: 2800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 3A, 0V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: IXYS
Win Source Part Number: 1049826-IXTH6N50D2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6A (Tc)
Max Gate Charge: 96nC @ 5V
Max Input Capacitance: 2800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 3A, 0V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IXTH6N50D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH6N50D2-ND
Single FETs, MOSFETs IXTH6N50D2-ND
N-Channel 500V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 500V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
MOSFET N-CH 500V 6A TO247 - 401-IXTH6N50D2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 6A TO247
401-IXTH6N50D2
MOSFET N-CH 500V 6A TO247 401-IXTH6N50D2
MOSFET N-CH 500V 6A TO247

MOSFET N-CH 500V 6A TO247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH6N50D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH6N50D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH6N50D2
MOSFET N-CH 500V 6A TO247

MOSFET N-CH 500V 6A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH MOSFETS (D2) 500V 6A

MOSFET N-CH MOSFETS (D2) 500V 6A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049826-IXTH6N50D2 IXTH6N50D2-ND 401-IXTH6N50D2 IXTH6N50D2 IXTH6N50D2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N50D2 Single FETs, MOSFETs MOSFET N-CH 500V 6A TO247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 500 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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