Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N100D2 IXTH6N100D2

Description
Manufacturer: IXYS Win Source Part Number: 1049824-IXTH6N100D2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 6A (Tc) Max Gate Charge: 95nC @ 5V Max Input Capacitance: 2650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 3A, 0V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049824-IXTH6N100D2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 6A (Tc) Max Gate Charge: 95nC @ 5V Max Input Capacitance: 2650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 3A, 0V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N100D2 - 1049824-IXTH6N100D2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N100D2
1049824-IXTH6N100D2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N100D2 1049824-IXTH6N100D2
Manufacturer: IXYS Win Source Part Number: 1049824-IXTH6N100D2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 6A (Tc) Max Gate Charge: 95nC @ 5V Max Input Capacitance: 2650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 3A, 0V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049824-IXTH6N100D2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 6A (Tc)
Max Gate Charge: 95nC @ 5V
Max Input Capacitance: 2650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 3A, 0V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTH6N100D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH6N100D2-ND
Single FETs, MOSFETs 238-IXTH6N100D2-ND
N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 6Amps 1000V

MOSFET 6Amps 1000V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH6N100D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH6N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH6N100D2
MOSFET N-CH 1000V 6A TO247

MOSFET N-CH 1000V 6A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049824-IXTH6N100D2 238-IXTH6N100D2-ND IXTH6N100D2 IXTH6N100D2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH6N100D2 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 1000 volts
PD 300000 milliwatts
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