Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 IXTH67N10

Description
Manufacturer: IXYS Win Source Part Number: 205704-IXTH67N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 4500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205704-IXTH67N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 4500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 - 205704-IXTH67N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10
205704-IXTH67N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 205704-IXTH67N10
Manufacturer: IXYS Win Source Part Number: 205704-IXTH67N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 4500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205704-IXTH67N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
100V 67A MOSFET Transistor
278-IXTH67N10
100V 67A MOSFET Transistor 278-IXTH67N10
MOSFET N-CH 100V 67A TO247 Product overview: IXTH67N10 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 67A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH67N10 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 67A TO247 Product overview: IXTH67N10 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 67A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH67N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTH67N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH67N10-ND
Single FETs, MOSFETs IXTH67N10-ND
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH67N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH67N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH67N10
MOSFET N-CH 100V 67A TO247

MOSFET N-CH 100V 67A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 67 Amps 100V 0.025 Rds

MOSFET 67 Amps 100V 0.025 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205704-IXTH67N10 278-IXTH67N10 IXTH67N10-ND IXTH67N10 IXTH67N10
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 100V 67A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 300000 milliwatts 300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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