Zilog Single FETs, MOSFETs IXTH67N10

Description
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTH67N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH67N10-ND
Single FETs, MOSFETs IXTH67N10-ND
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Singapore
100V 67A MOSFET Transistor
278-IXTH67N10
100V 67A MOSFET Transistor 278-IXTH67N10
MOSFET N-CH 100V 67A TO247 Product overview: IXTH67N10 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 67A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH67N10 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 67A TO247 Product overview: IXTH67N10 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 67A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH67N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 - 205704-IXTH67N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10
205704-IXTH67N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 205704-IXTH67N10
Manufacturer: IXYS Win Source Part Number: 205704-IXTH67N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 4500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205704-IXTH67N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 67 Amps 100V 0.025 Rds

MOSFET 67 Amps 100V 0.025 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH67N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH67N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH67N10
MOSFET N-CH 100V 67A TO247

MOSFET N-CH 100V 67A TO247

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTH67N10-ND 278-IXTH67N10 205704-IXTH67N10 IXTH67N10 IXTH67N10
Product Name Single FETs, MOSFETs 100V 67A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH67N10 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Tube TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
MOSFET Operating Mode Enhancement
Transconductance 0.0300 kS
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