Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTH5N100A

Description
Manufacturer: IXYS Win Source Part Number: 1324560-IXTH5N100A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 180W (Tc) Supplier Device Package: TO-247 (IXTH) Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 70 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXTH5N100A-NDR,Q9170 04 Base Product Number: IXTH5 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1324560-IXTH5N100A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 180W (Tc) Supplier Device Package: TO-247 (IXTH) Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 70 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXTH5N100A-NDR,Q9170 04 Base Product Number: IXTH5 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324560-IXTH5N100A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324560-IXTH5N100A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324560-IXTH5N100A
Manufacturer: IXYS Win Source Part Number: 1324560-IXTH5N100A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 180W (Tc) Supplier Device Package: TO-247 (IXTH) Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 70 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXTH5N100A-NDR,Q9170 04 Base Product Number: IXTH5 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324560-IXTH5N100A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Supplier Device Package: TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 70
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IXTH5N100A-NDR,Q917004
Base Product Number: IXTH5
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 5 Amps 1000V 2 Rds

MOSFET 5 Amps 1000V 2 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH5N100A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH5N100A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH5N100A
MOSFET N-CH 1000V 5A TO247

MOSFET N-CH 1000V 5A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324560-IXTH5N100A IXTH5N100A IXTH5N100A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SB857C-E - 855126-2SB857C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 64-2096PBF - 1006671-64-2096PBF - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 75 volts
PD 300000 milliwatts
View Details
3 suppliers