Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH52P10P IXTH52P10P

Description
Manufacturer: IXYS Win Source Part Number: 1049819-IXTH52P10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2845pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049819-IXTH52P10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2845pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH52P10P - 1049819-IXTH52P10P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH52P10P
1049819-IXTH52P10P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH52P10P 1049819-IXTH52P10P
Manufacturer: IXYS Win Source Part Number: 1049819-IXTH52P10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2845pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049819-IXTH52P10P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2845pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTH52P10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH52P10P-ND
Single FETs, MOSFETs 238-IXTH52P10P-ND
P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET -52.0 Amps -100V 0.050 Rds

MOSFET -52.0 Amps -100V 0.050 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH52P10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH52P10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH52P10P
MOSFET P-CH 100V 52A TO247

MOSFET P-CH 100V 52A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049819-IXTH52P10P 238-IXTH52P10P-ND IXTH52P10P IXTH52P10P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH52P10P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 100 volts
PD 300000 milliwatts
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