Manufacturer: IXYS
Win Source Part Number: 1049818-IXTH50N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 165nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 65 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): FKP300A; IXTH50N30SN; IRFP4242PBF;
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
MOSFET N-CH 300V 50A TO247
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049818-IXTH50N30 | IXTH50N30 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N30 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 300 volts | |
| PD | 400000 milliwatts |