Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N25T IXTH50N25T

Description
Manufacturer: IXYS Win Source Part Number: 1049817-IXTH50N25T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049817-IXTH50N25T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N25T - 1049817-IXTH50N25T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N25T
1049817-IXTH50N25T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N25T 1049817-IXTH50N25T
Manufacturer: IXYS Win Source Part Number: 1049817-IXTH50N25T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049817-IXTH50N25T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTH50N25T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH50N25T-ND
Single FETs, MOSFETs IXTH50N25T-ND
N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)

N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH50N25T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH50N25T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH50N25T
MOSFET N-CH 250V 50A TO247

MOSFET N-CH 250V 50A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Trench Gate Power MOSFET

MOSFET Trench Gate Power MOSFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049817-IXTH50N25T IXTH50N25T-ND IXTH50N25T IXTH50N25T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N25T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts
PD 400000 milliwatts
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