Manufacturer: IXYS
Win Source Part Number: 1049816-IXTH50N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 50A TO247 Product overview: IXTH50N20 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH50N20 can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 50A TO247
MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:50A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):45MOHM; RDS(ON. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 200V 50A TO247
Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-247AD
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049816-IXTH50N20 | 278-IXTH50N20 | IXTH50N20 | 12801688 | IXTH50N20 | 401-IXTH50N20 | IXTH50N20 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH50N20 | 200V 50A MOSFET Transistor | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-247AD | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||
| PD | 300000 milliwatts | 300 milliwatts | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3; TO-247 (IXTH) | Tube | TO-247; TO-247-3 | TO-247; TO-247-3 |
