Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH4N150 IXTH4N150

Description
Manufacturer: IXYS Win Source Part Number: 1049814-IXTH4N150 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1500V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 44.5nC @ 10V Max Input Capacitance: 1576pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH4N150 - 1049814-IXTH4N150 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTH4N150-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IXTH4N150 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 1500V 4A TO-247 - 401-IXTH4N150 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH4N150 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049814-IXTH4N150 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1500V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 44.5nC @ 10V Max Input Capacitance: 1576pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH4N150 - 1049814-IXTH4N150 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH4N150
1049814-IXTH4N150
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH4N150 1049814-IXTH4N150
Manufacturer: IXYS Win Source Part Number: 1049814-IXTH4N150 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1500V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 44.5nC @ 10V Max Input Capacitance: 1576pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049814-IXTH4N150
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1500V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 44.5nC @ 10V
Max Input Capacitance: 1576pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTH4N150-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH4N150-ND
Single FETs, MOSFETs IXTH4N150-ND
N-Channel 1500V 4A (Tc) 280W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1500V 4A (Tc) 280W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Single FETs, MOSFETs - IXTH4N150 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH4N150
Single FETs, MOSFETs IXTH4N150
MOSFET N-CH 1500V 4A TO247

MOSFET N-CH 1500V 4A TO247

Supplier's Site Datasheet
MOSFET N-CH 1500V 4A TO-247 - 401-IXTH4N150 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1500V 4A TO-247
401-IXTH4N150
MOSFET N-CH 1500V 4A TO-247 401-IXTH4N150
MOSFET N-CH 1500V 4A TO-247

MOSFET N-CH 1500V 4A TO-247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH4N150 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH4N150
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH4N150
MOSFET N-CH 1500V 4A TO247

MOSFET N-CH 1500V 4A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH4N150
MOSFET IXTH4N150
MOSFET High Voltage Power MOSFET

MOSFET High Voltage Power MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049814-IXTH4N150 IXTH4N150-ND IXTH4N150 401-IXTH4N150 IXTH4N150 IXTH4N150
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH4N150 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET N-CH 1500V 4A TO-247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 1500 volts 1500 volts 1500 volts
PD 280000 milliwatts 280000 milliwatts 280000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
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