N-Channel 650V 48A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)
Manufacturer: IXYS
Win Source Part Number: 1191257-IXTH48N65X2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 660W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 48A
Rds On (Maximum) at Id, Vgs: 68mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 77nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 4420pF at 25V
MOSFET N-CH 650V 48A TO247
MOSFET N-CH 650V 48A TO247
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTH48N65X2-ND | 1191257-IXTH48N65X2 | IXTH48N65X2 | IXTH48N65X2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IXTH48N65X2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | 10V |
| V(BR)DSS | 650 volts | 650 volts | ||
| PD | 660000 milliwatts | 660000 milliwatts |
