Zilog Single FETs, MOSFETs IXTH450P2

Description
N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTH450P2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH450P2-ND
Single FETs, MOSFETs IXTH450P2-ND
N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Single FETs, MOSFETs - IXTH450P2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH450P2
Single FETs, MOSFETs IXTH450P2
MOSFET N-CH 500V 16A TO247

MOSFET N-CH 500V 16A TO247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2 - 1049810-IXTH450P2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2
1049810-IXTH450P2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2 1049810-IXTH450P2
Manufacturer: IXYS Win Source Part Number: 1049810-IXTH450P2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 2530pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 330 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049810-IXTH450P2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 2530pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 330 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

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Sheung Wan, Hong Kong
MOSFET PolarP2 Power MOSFET

MOSFET PolarP2 Power MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH450P2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH450P2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH450P2
MOSFET N-CH 500V 16A TO247

MOSFET N-CH 500V 16A TO247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTH450P2-ND IXTH450P2 1049810-IXTH450P2 IXTH450P2 IXTH450P2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
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