Zilog Single FETs, MOSFETs IXTH450P2

Description
N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTH450P2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH450P2-ND
Single FETs, MOSFETs IXTH450P2-ND
N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Single FETs, MOSFETs - IXTH450P2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH450P2
Single FETs, MOSFETs IXTH450P2
MOSFET N-CH 500V 16A TO247

MOSFET N-CH 500V 16A TO247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2 - 1049810-IXTH450P2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2
1049810-IXTH450P2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2 1049810-IXTH450P2
Manufacturer: IXYS Win Source Part Number: 1049810-IXTH450P2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 2530pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 330 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049810-IXTH450P2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 2530pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 330 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH450P2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH450P2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH450P2
MOSFET N-CH 500V 16A TO247

MOSFET N-CH 500V 16A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PolarP2 Power MOSFET

MOSFET PolarP2 Power MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH450P2-ND IXTH450P2 1049810-IXTH450P2 IXTH450P2 IXTH450P2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH450P2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
Unlock Full Specs
to access all available technical data