Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 IXTH40N30

Description
Manufacturer: IXYS Win Source Part Number: 1049804-IXTH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial
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Description
Manufacturer: IXYS Win Source Part Number: 1049804-IXTH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 - 1049804-IXTH40N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30
1049804-IXTH40N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 1049804-IXTH40N30
Manufacturer: IXYS Win Source Part Number: 1049804-IXTH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial

Manufacturer: IXYS
Win Source Part Number: 1049804-IXTH40N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - IXTH40N30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH40N30-ND
Single FETs, MOSFETs IXTH40N30-ND
N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Transistor - 19206663 - Radwell International
Willingboro, NJ, United States
Transistor
19206663
Transistor 19206663
N-CHANNEL MOSFET, 300 V, 40 AMP, 85 MOHMS, 300 WATT, 1 CHANNEL, SINGLE CONFIGURATION, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

N-CHANNEL MOSFET, 300 V, 40 AMP, 85 MOHMS, 300 WATT, 1 CHANNEL, SINGLE CONFIGURATION, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH40N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH40N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH40N30
MOSFET N-CH 300V 40A TO247

MOSFET N-CH 300V 40A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40 Amps 300V 0.085 Rds

MOSFET 40 Amps 300V 0.085 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049804-IXTH40N30 IXTH40N30-ND 19206663 IXTH40N30 IXTH40N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
PD 300000 milliwatts
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