Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 IXTH40N30

Description
Manufacturer: IXYS Win Source Part Number: 1049804-IXTH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial
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Description
Manufacturer: IXYS Win Source Part Number: 1049804-IXTH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 - 1049804-IXTH40N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30
1049804-IXTH40N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 1049804-IXTH40N30
Manufacturer: IXYS Win Source Part Number: 1049804-IXTH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial

Manufacturer: IXYS
Win Source Part Number: 1049804-IXTH40N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - IXTH40N30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH40N30-ND
Single FETs, MOSFETs IXTH40N30-ND
N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 40 Amps 300V 0.085 Rds

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Transistor - 19206663 - Radwell International
Willingboro, NJ, United States
Transistor
19206663
Transistor 19206663
N-CHANNEL MOSFET, 300 V, 40 AMP, 85 MOHMS, 300 WATT, 1 CHANNEL, SINGLE CONFIGURATION, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

N-CHANNEL MOSFET, 300 V, 40 AMP, 85 MOHMS, 300 WATT, 1 CHANNEL, SINGLE CONFIGURATION, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH40N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH40N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH40N30
MOSFET N-CH 300V 40A TO247

MOSFET N-CH 300V 40A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1049804-IXTH40N30 IXTH40N30-ND IXTH40N30 19206663 IXTH40N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH40N30 Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
PD 300000 milliwatts
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