Manufacturer: IXYS
Win Source Part Number: 1049803-IXTH3N150
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1500V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38.6nC @ 10V
Max Input Capacitance: 1375pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7.3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 1500V 3A TO247
N-Channel 1500V 3A (Tc) 250W (Tc) Through Hole TO-247 (IXTH)
MOSFET High Voltage Power MOSFET
MOSFET N-CH 1500V 3A TO247
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049803-IXTH3N150 | IXTH3N150 | 238-IXTH3N150-ND | IXTH3N150 | IXTH3N150 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH3N150 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 1500 volts | 1500 volts | |||
| PD | 250000 milliwatts | 250000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
