IXYS Corporation Electronic Surplus - IXTH3N120 IXTH3N120

Manufacturer: IXYS Win Source Part Number: 1191255-IXTH3N120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 200W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 4.5Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 39nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V