Manufacturer: IXYS
Win Source Part Number: 1049799-IXTH360N055T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 935W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 360A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 330nC @ 10V
Max Input Capacitance: 20000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
N-Channel 55V 360A (Tc) 935W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 55V 360A TO247
MOSFET N-CH 55V 360A TO-247
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049799-IXTH360N055T2 | IXTH360N055T2-ND | IXTH360N055T2 | IXTH360N055T2 | 401-IXTH360N055T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH360N055T2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 55V 360A TO-247 |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 55 volts | 55 volts | |||
| PD | 935000 milliwatts | 935000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; SOT3; TO-247 (IXTH) | TO-247; TO-247-3 | TO-247; TO-247-3 |
