MOSFET N-CH 500V 30A TO247
Manufacturer: IXYS
Win Source Part Number: 1049796-IXTH30N50L2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 8100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
N-Channel 500V 30A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
MOSFET 30.0 Amps 500V 0.002 Rds
MOSFET N-CH 500V 30A TO247
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTH30N50L2 | 1049796-IXTH30N50L2 | 238-IXTH30N50L2-ND | IXTH30N50L2 | IXTH30N50L2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH30N50L2 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 500 volts | 500 volts | |||
| IDSS | 30000 milliamps |
