Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH30N25 IXTH30N25

Description
Manufacturer: IXYS Win Source Part Number: 1049795-IXTH30N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 136nC @ 10V Max Input Capacitance: 3950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049795-IXTH30N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 136nC @ 10V Max Input Capacitance: 3950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH30N25 - 1049795-IXTH30N25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH30N25
1049795-IXTH30N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH30N25 1049795-IXTH30N25
Manufacturer: IXYS Win Source Part Number: 1049795-IXTH30N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 136nC @ 10V Max Input Capacitance: 3950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049795-IXTH30N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 136nC @ 10V
Max Input Capacitance: 3950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
250V 30A MOSFET Transistor
278-IXTH30N25
250V 30A MOSFET Transistor 278-IXTH30N25
MOSFET N-CH 250V 30A TO247 Product overview: IXTH30N25 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH30N25 can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 30A TO247 Product overview: IXTH30N25 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH30N25 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH30N25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH30N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH30N25
MOSFET N-CH 250V 30A TO247

MOSFET N-CH 250V 30A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30 Amps 250V 0.075 Rds

MOSFET 30 Amps 250V 0.075 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049795-IXTH30N25 278-IXTH30N25 IXTH30N25 IXTH30N25
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH30N25 250V 30A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts
PD 200000 milliwatts 200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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