N-Channel 1500V 2A (Tc) 290W (Tc) Through Hole TO-247 (IXTH)
Win Source Part Number: 1066200-IXTH2N150L
Category: Discrete Semiconductor Products>Transistors
Series: Linear
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V
Vgs(th) (Max) @ Id: 8.5V @ 250µA
Power Dissipation (Max): 290W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTH2
Drive Voltage (Max Rds On, Min Rds On): 20V
MOSFET DISCMOSFET N-CH LINEAR STD
MOSFET N-CH 1500V 2A TO247
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 238-IXTH2N150L-ND | 1066200-IXTH2N150L | IXTH2N150L | IXTH2N150L |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
