Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTH2N150L

Description
Win Source Part Number: 1066200-IXTH2N150L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Linear Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V Vgs(th) (Max) @ Id: 8.5V @ 250µA Power Dissipation (Max): 290W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTH2 Drive Voltage (Max Rds On, Min Rds On): 20V
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Description
Win Source Part Number: 1066200-IXTH2N150L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Linear Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V Vgs(th) (Max) @ Id: 8.5V @ 250µA Power Dissipation (Max): 290W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTH2 Drive Voltage (Max Rds On, Min Rds On): 20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1066200-IXTH2N150L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1066200-IXTH2N150L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1066200-IXTH2N150L
Win Source Part Number: 1066200-IXTH2N150L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Linear Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V Vgs(th) (Max) @ Id: 8.5V @ 250µA Power Dissipation (Max): 290W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTH2 Drive Voltage (Max Rds On, Min Rds On): 20V

Win Source Part Number: 1066200-IXTH2N150L
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Linear
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V
Vgs(th) (Max) @ Id: 8.5V @ 250µA
Power Dissipation (Max): 290W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTH2
Drive Voltage (Max Rds On, Min Rds On): 20V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTH2N150L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH2N150L-ND
Single FETs, MOSFETs 238-IXTH2N150L-ND
N-Channel 1500V 2A (Tc) 290W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1500V 2A (Tc) 290W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET DISCMOSFET N-CH LINEAR STD

MOSFET DISCMOSFET N-CH LINEAR STD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH2N150L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH2N150L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH2N150L
MOSFET N-CH 1500V 2A TO247

MOSFET N-CH 1500V 2A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1066200-IXTH2N150L 238-IXTH2N150L-ND IXTH2N150L IXTH2N150L
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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