IXYS Corporation Single FETs, MOSFETs IXTH2N150

Description
N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTH2N150-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH2N150-ND
Single FETs, MOSFETs 238-IXTH2N150-ND
N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH2N150
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH2N150
DISCMOSFET N-CH STD-HIVOLTAGE TO

DISCMOSFET N-CH STD-HIVOLTAGE TO

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 238-IXTH2N150-ND IXTH2N150
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB859C-E - 855128-2SB859C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor - TGF2929-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Power Gain 14 dB
View Details
4 suppliers