IXYS Corporation Single FETs, MOSFETs IXTH2N150

Description
N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)
  • Single FETs, MOSFETs - 238-IXTH2N150-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTH2N150-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH2N150-ND
Single FETs, MOSFETs 238-IXTH2N150-ND
N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1500V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH2N150
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH2N150
DISCMOSFET N-CH STD-HIVOLTAGE TO

DISCMOSFET N-CH STD-HIVOLTAGE TO

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 238-IXTH2N150-ND IXTH2N150
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFR4620TRL - ODG (Origin Data Global)
Infineon Technologies AG
Single FETs, MOSFETs
AUIRFR4620TRL
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
View Details
8 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1540E - 855043-2SA1540E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1540E
2SA1540E
Specs
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025 - Qorvo
Qorvo
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
QPD1025
Specs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Earless)
View Details
2 suppliers