Manufacturer: IXYS
Win Source Part Number: 1049791-IXTH26P20P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 2740pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): SFH9250L; IXTH16P20SN; IXTH16P20; IXTH26P20P;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
MOSFET P-CH 200V 26A TO247
MOSFET -26.0 Amps -200V 0.170 Rds
MOSFET P-CH 200V 26A TO247
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049791-IXTH26P20P | IXTH26P20P-ND | IXTH26P20P | IXTH26P20P | IXTH26P20P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH26P20P | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| V(BR)DSS | 200 volts | 200 volts | |||
| PD | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
