IXYS Corporation Electronic Surplus - IXTH22N50P IXTH22N50P

Description
Manufacturer: IXYS Win Source Part Number: 1191251-IXTH22N50P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 350W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 270mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2630pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191251-IXTH22N50P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 350W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 270mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2630pF at 25V
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Electronic Surplus - IXTH22N50P - 1191251-IXTH22N50P - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IXTH22N50P
1191251-IXTH22N50P
Electronic Surplus - IXTH22N50P 1191251-IXTH22N50P
Manufacturer: IXYS Win Source Part Number: 1191251-IXTH22N50P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 350W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 270mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2630pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191251-IXTH22N50P
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 350W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 22A
Rds On (Maximum) at Id, Vgs: 270mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2630pF at 25V

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 1191251-IXTH22N50P
Product Name Electronic Surplus - IXTH22N50P
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