Zilog Single FETs, MOSFETs IXTH20P50P

Description
P-Channel 500V 20A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
P-Channel 500V 20A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTH20P50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH20P50P-ND
Single FETs, MOSFETs 238-IXTH20P50P-ND
P-Channel 500V 20A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)

P-Channel 500V 20A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Single FETs, MOSFETs - IXTH20P50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH20P50P
Single FETs, MOSFETs IXTH20P50P
MOSFET P-CH 500V 20A TO247

MOSFET P-CH 500V 20A TO247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20P50P - 1049782-IXTH20P50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20P50P
1049782-IXTH20P50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20P50P 1049782-IXTH20P50P
Manufacturer: IXYS Win Source Part Number: 1049782-IXTH20P50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 103nC @ 10V Max Input Capacitance: 5120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049782-IXTH20P50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 460W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 103nC @ 10V
Max Input Capacitance: 5120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH20P50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH20P50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH20P50P
MOSFET P-CH 500V 20A TO247

MOSFET P-CH 500V 20A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20.0 Amps -500V 0.450 Rds

MOSFET -20.0 Amps -500V 0.450 Rds

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTH20P50P-ND IXTH20P50P 1049782-IXTH20P50P IXTH20P50P IXTH20P50P
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20P50P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-20 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SB860-E - 855129-2SB860-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details