Manufacturer: IXYS
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series: Polar P3™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 3000 V
Power Dissipation (Max): 195W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
N-Channel 3000V 1A (Tc) 195W (Tc) Through Hole TO-247HV
MOSFET DISC MOSFET N-CH STD-POLAR3
MOSFET N-CH 3000V 1A TO247HV
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 238-IXTH1N300P3HV-ND | IXTH1N300P3HV | IXTH1N300P3HV | |
| Product Name | Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
