Manufacturer: IXYS
Win Source Part Number: 1049776-IXTH182N055T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 182A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 4850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
N-Channel 55V 182A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 55V 182A TO247
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1049776-IXTH182N055T | IXTH182N055T-ND | IXTH182N055T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH182N055T | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 55 volts | ||
| PD | 360000 milliwatts |
