Manufacturer: IXYS
Win Source Part Number: 1049766-IXTH15N50L2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 123nC @ 10V
Max Input Capacitance: 4080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 480 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
N CHANNEL POWER MOSFET, LINEAR L2, 500V, 15A, TO-247, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:500V, CONTINUOUS DRAIN CURRENT ID:15A, ON RESISTANCE RDS(ON):0.48OHM, TRANSISTOR MOUNTING:THROUGH HOLE, NO. OF PINS:3PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N-Channel 500V 15A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
MOSFET LINEAR L2 SERIES MOSFET 500V 15A
MOSFET N-CH 500V 15A TO247
| Win Source Electronics | Radwell International | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049766-IXTH15N50L2 | 32417734 | IXTH15N50L2-ND | IXTH15N50L2 | IXTH15N50L2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH15N50L2 | Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | ||||
| PD | 300000 milliwatts |
