Manufacturer: IXYS
Win Source Part Number: 1049764-IXTH150N17T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 175V
Continuous Drain Current at 25°C: 150A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 9800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 12 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 175V 150A TO247 Product overview: IXTH150N17T from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 175V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 175V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH150N17T can be used for catalog matching and distributor lookup.
MOSFET N-CH 175V 150A TO247
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049764-IXTH150N17T | 278-IXTH150N17T | IXTH150N17T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH150N17T | 175V 150A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 175 volts | ||
| PD | 830000 milliwatts | 830000 milliwatts |