Zilog 1100V 13A MOSFET Transistor IXTH13N110

Description
MOSFET N-CH 1100V 13A TO247 Product overview: IXTH13N110 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1100V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH13N110 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
MOSFET N-CH 1100V 13A TO247 Product overview: IXTH13N110 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1100V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH13N110 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
1100V 13A MOSFET Transistor
278-IXTH13N110
1100V 13A MOSFET Transistor 278-IXTH13N110
MOSFET N-CH 1100V 13A TO247 Product overview: IXTH13N110 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1100V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH13N110 can be used for catalog matching and distributor lookup.

MOSFET N-CH 1100V 13A TO247 Product overview: IXTH13N110 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1100V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH13N110 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH13N110 - 1049761-IXTH13N110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH13N110
1049761-IXTH13N110
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH13N110 1049761-IXTH13N110
Manufacturer: IXYS Win Source Part Number: 1049761-IXTH13N110 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1100V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 5650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 920 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049761-IXTH13N110
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1100V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 195nC @ 10V
Max Input Capacitance: 5650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 920 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH13N110 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH13N110
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH13N110
MOSFET N-CH 1100V 13A TO247

MOSFET N-CH 1100V 13A TO247

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IXTH13N110 1049761-IXTH13N110 IXTH13N110
Product Name 1100V 13A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH13N110 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 360000 milliwatts 360000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
Unlock Full Specs
to access all available technical data