N-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)
Manufacturer: IXYS
Win Source Part Number: 1049760-IXTH130N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 8800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 130A TO-247
MOSFET N-CH 200V 130A TO247
| DigiKey | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTH130N20T-ND | 1049760-IXTH130N20T | 401-IXTH130N20T | IXTH130N20T | IXTH130N20T |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T | MOSFET N-CH 200V 130A TO-247 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 (IXTH) | Through Hole | ||
| V(BR)DSS | 200 volts | 200 volts | |||
| PD | 830000 milliwatts | 830000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
