Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T IXTH130N20T

Description
Manufacturer: IXYS Win Source Part Number: 1049760-IXTH130N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T - 1049760-IXTH130N20T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTH130N20T-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH130N20T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 200V 130A TO-247 - 401-IXTH130N20T - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049760-IXTH130N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T - 1049760-IXTH130N20T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T
1049760-IXTH130N20T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T 1049760-IXTH130N20T
Manufacturer: IXYS Win Source Part Number: 1049760-IXTH130N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1049760-IXTH130N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 8800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTH130N20T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH130N20T-ND
Single FETs, MOSFETs IXTH130N20T-ND
N-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

N-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH130N20T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH130N20T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH130N20T
MOSFET N-CH 200V 130A TO247

MOSFET N-CH 200V 130A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH130N20T
MOSFET IXTH130N20T
MOSFET 130Amps 200V

MOSFET 130Amps 200V

Buy Now Datasheet
MOSFET N-CH 200V 130A TO-247 - 401-IXTH130N20T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 130A TO-247
401-IXTH130N20T
MOSFET N-CH 200V 130A TO-247 401-IXTH130N20T
MOSFET N-CH 200V 130A TO-247

MOSFET N-CH 200V 130A TO-247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049760-IXTH130N20T IXTH130N20T-ND IXTH130N20T IXTH130N20T 401-IXTH130N20T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 200V 130A TO-247
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 830000 milliwatts 830000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3 Through Hole
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