Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T IXTH130N20T

Description
Manufacturer: IXYS Win Source Part Number: 1049760-IXTH130N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T - 1049760-IXTH130N20T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTH130N20T-ND - DigiKey
    DigiKey
  • MOSFET N-CH 200V 130A TO-247 - 401-IXTH130N20T - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH130N20T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049760-IXTH130N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T - 1049760-IXTH130N20T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T
1049760-IXTH130N20T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T 1049760-IXTH130N20T
Manufacturer: IXYS Win Source Part Number: 1049760-IXTH130N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1049760-IXTH130N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 8800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTH130N20T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH130N20T-ND
Single FETs, MOSFETs IXTH130N20T-ND
N-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

N-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
MOSFET N-CH 200V 130A TO-247 - 401-IXTH130N20T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 130A TO-247
401-IXTH130N20T
MOSFET N-CH 200V 130A TO-247 401-IXTH130N20T
MOSFET N-CH 200V 130A TO-247

MOSFET N-CH 200V 130A TO-247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH130N20T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH130N20T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH130N20T
MOSFET N-CH 200V 130A TO247

MOSFET N-CH 200V 130A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH130N20T
MOSFET IXTH130N20T
MOSFET 130Amps 200V

MOSFET 130Amps 200V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049760-IXTH130N20T IXTH130N20T-ND 401-IXTH130N20T IXTH130N20T IXTH130N20T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH130N20T Single FETs, MOSFETs MOSFET N-CH 200V 130A TO-247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 830000 milliwatts 830000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3 Through Hole
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