Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH120P065T IXTH120P065T

Description
Manufacturer: IXYS Win Source Part Number: 1049755-IXTH120P065T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 298W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 65V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 13200pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 10 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049755-IXTH120P065T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 298W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 65V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 13200pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 10 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH120P065T - 1049755-IXTH120P065T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH120P065T
1049755-IXTH120P065T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH120P065T 1049755-IXTH120P065T
Manufacturer: IXYS Win Source Part Number: 1049755-IXTH120P065T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 298W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 65V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 13200pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 10 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049755-IXTH120P065T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 298W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 65V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 13200pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 10 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTH120P065T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH120P065T-ND
Single FETs, MOSFETs 238-IXTH120P065T-ND
P-Channel 65V 120A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

P-Channel 65V 120A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET -120 Amps -65V 0.01 Rds

MOSFET -120 Amps -65V 0.01 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH120P065T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH120P065T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH120P065T
MOSFET P-CH 65V 120A TO247

MOSFET P-CH 65V 120A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049755-IXTH120P065T 238-IXTH120P065T-ND IXTH120P065T IXTH120P065T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH120P065T Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 65 volts
PD 298000 milliwatts
Unlock Full Specs
to access all available technical data