MOSFET P-CH 500V 11A TO247
Manufacturer: IXYS
Win Source Part Number: 205702-IXTH11P50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 4700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
P-Channel 500V 11A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
MOSFET P-CH 500V 11A TO247
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH11P50 | 205702-IXTH11P50 | 238-IXTH11P50-ND | IXTH11P50 | IXTH11P50 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH11P50 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 500 volts | 500 volts | |||
| IDSS | 11000 milliamps |
