MOSFET N-CH 100V 110A TO247
N-Channel 100V 110A (Tc) 600W (Tc) Through Hole TO-247 (IXTH)
Manufacturer: IXYS
Win Source Part Number: 111716-IXTH110N10L2
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 10500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 110A TO247
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTH110N10L2 | 238-IXTH110N10L2-ND | 111716-IXTH110N10L2 | IXTH110N10L2 | IXTH110N10L2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH110N10L2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | 100 volts | |||
| IDSS | 110000 milliamps |
