Manufacturer: IXYS
Win Source Part Number: 777653-IXTH10N100D2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Family Name: IXTH10N100D2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 1000V
Gate Charge (Qg) (Maximum) @ Vgs: 200nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 5320pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 695W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
Introduction Date: April 18, 2017
Estimated EOL Date: 2033
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
N-Channel 1000V 10A (Tc) 695W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 1000V 10A TO247
MOSFET DISCMOSFET N-CH DEPL MODE-D2
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 777653-IXTH10N100D2 | IXTH10N100D2-ND | IXTH10N100D2 | IXTH10N100D2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH10N100D2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Depletion | |||
| PD | 695000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
