N-Channel 2000V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™
Win Source Part Number: 1346652-IXTF6N200P3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Polar P3™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 2000 V
Power Dissipation (Max): 215W (Tc)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Supplier Device Package: ISOPLUS i4-PAC™
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 42 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTF6
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
MOSFET N-CH 2000V 4A I4PAC
MOSFET DISC MSFT N-CH STD-POLAR3
| DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTF6N200P3-ND | 1346652-IXTF6N200P3 | IXTF6N200P3 | IXTF6N200P3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
